JOPSS - Search Results

Journal Articles

Electron paramagnetic resonance study of the 4/5 center in 4H-SiC

Umeda, Takahide*; Son, N. T.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Janzn, E.*

Materials Science Forum, 527-529, p.543 - 546, 2006/00

no abstracts in English

Journal Articles

Divacancy model for P6/P7 centers in 4H- and 6H-SiC

Son, N. T.*; Umeda, Takahide*; Isoya, Junichi*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; et al.

Materials Science Forum, 527-529, p.527 - 530, 2006/00

no abstracts in English

Journal Articles

EPR and theoretical studies of positively charged carbon vacancy in 4-SiC

Umeda, Takahide*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Kamiya, Tomihiro; Gali, A.*; Dek, P.*; Son, N. T.*; Janzn, E.*

Physical Review B, 70(23), p.235212_1 - 235212_6, 2004/12

https://doi.org/10.1103/PhysRevB.70.235212

Times Cited Count：45 Percentile：83.54(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

EPR identification of two types of carbon vacancies in 4-SiC

Umeda, Takahide*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Kamiya, Tomihiro

Physical Review B, 69(12), p.121201_1 - 121201_4, 2004/03

https://doi.org/10.1103/PhysRevB.69.121201

Times Cited Count：47 Percentile：84.74(Materials Science, Multidisciplinary)

EI5 and EI6 centers in 4-SiC were studied using EPR. EI5 and EI6 centers were introduced by 3MeV-electron irradiation at 850 $^{circ}$ C. EI5 and EI6 were reported to be carbon vacancy with positive charge and silicon snti-site with positive charge, respectively. As a result of the angle dependence and temperature dependence measurement, both sites were identified to be carbon vacancies with positive charge. The defference between EI5 and EI6 is explained in terms of the difference of sites (like -site and -site) located in 4-SiC.

Journal Articles

EPR studies of the isolated negatively charged silicon vacancies in -type 4- and 6-SiC; Identification of $_{3v}$ symmetry and silicon sites

Mizuochi, Norikazu*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*

Physical Review B, 68(16), p.165206_1 - 165206_11, 2003/10

https://doi.org/10.1103/PhysRevB.68.165206

Times Cited Count：41 Percentile：82.86(Materials Science, Multidisciplinary)

Isolated silicon vacancies with negative charge (V $_{Si}$ $^{-}$ ) in 4H- and 6H-SiC were studied using EPR. The samples used in this study were irradiated with electron at 3 MeV at RT. After irradiation, the samples were annealed at 300 $^{circ}$ C in Ar to eliminate C-related isolated vacancies. As the result of $^{13}$ C hyperfine spectra, two kinds of V $_{Si}$ $^{-}$ (I) and V $_{Si}$ $^{-}$ (II) were distinguished and they are assigned to be arising from hexagonal and cubic sites of Si. In addition, both V $_{Si}$ $^{-}$ (I) and V $_{Si}$ $^{-}$ (II) signals have C $_{3v}$ symmetry, which means nearest-neighbor carbon atoms silightly distorted from a regular tetrahedron.

Journal Articles

Electrical characteristics of interface defects in oxides grown at 1200 $^{circ}$ C in dry oxygen ambient on silicon carbide and their thermal annealing effects

Yoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04

https://ci.nii.ac.jp/naid/110003172129

no abstracts in English

Journal Articles

Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C $_{3nu}$ symmetry in -type 4H-SiC

Mizuochi, Norikazu*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*

Physical Review B, 66(23), p.235202_1 - 235202_12, 2002/12

https://doi.org/10.1103/PhysRevB.66.235202

Times Cited Count：108 Percentile：95.03(Materials Science, Multidisciplinary)

EPR study was performed to understand vacancy-type defects in electron-irradiated 4H-SiC. In this study, the T $_{V2a}$ center which was reported to be S=1 was charactrized. As a result of untation method of EPR technique, it was revealed that the multipicity of the center is not triplet (S=1) but quartet (S=3/2). From the analysis of $^{13}$ C hyperfine interactions of nearest-neighbors, the canter was determined to be single silicon vacancy. In addition, it was found that the center is negativly charged silicon vacancy with C $_{3nu}$ symmetry.

Journal Articles

SIMS analyses of SiO $_{2}$ /4H-SiC(0001) interface

Yamashita, Kenya*; Kitabatake, Makoto*; Kusumoto, Osamu*; Takahashi, Kunimasa*; Uchida, Masao*; Miyanaga, Ryoko*; Ito, Hisayoshi; Yoshikawa, Masahito

Materials Science Forum, 389-393, p.1037 - 1040, 2002/00

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1037

Times Cited Count：3 Percentile：16.1(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H- and 6H-silicon carbide

Weidner, M.*; Frank, T.*; Pensl, G.*; Kawasuso, Atsuo; Ito, Hisayoshi; Krause-Rehberg, R.*

Physica B; Condensed Matter, 308-310, p.633 - 636, 2001/12

https://doi.org/10.1016/S0921-4526(01)00772-4

Times Cited Count：29 Percentile：78.18(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Steam annealing effects on CV characteristics of MOS structures on (110) face of 4H-SiC

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Takahashi, Kunimasa*; Kitabatake, Makoto*

Materials Science Forum, 353-356, p.635 - 638, 2001/00

no abstracts in English

Journal Articles

Effects of steam annealing on CV characteristics of 4H-SiC MOS structures

Yoshikawa, Masahito; Takahashi, Kunimasa*; Oshima, Takeshi; Kitabatake, Makoto*; Ito, Hisayoshi

Proceedings of 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), p.199 - 200, 2000/00

no abstracts in English

Journal Articles

Improvement of SiO $_{2}$ /4H-SiC interface by using high temperature hydrogen annealing at 1000 $^{circ}$ C

Fukuda, Kenji*; Nagai, Kiyoko*; Sekigawa, Toshihiro*; Yoshida, Sadafumi*; Arai, Kazuo*; Yoshikawa, Masahito

Proceedings of 1998 International Conference on Solid State Devices and Materials (SSDM 1998), p.100 - 101, 1998/00

no abstracts in English

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Electron paramagnetic resonance study of the 4/5 center in 4H-SiC

Divacancy model for P6/P7 centers in 4H- and 6H-SiC

EPR and theoretical studies of positively charged carbon vacancy in 4-SiC

EPR identification of two types of carbon vacancies in 4-SiC

EPR studies of the isolated negatively charged silicon vacancies in -type 4- and 6-SiC; Identification of $_{3v}$ symmetry and silicon sites

Electrical characteristics of interface defects in oxides grown at 1200 $^{circ}$ C in dry oxygen ambient on silicon carbide and their thermal annealing effects

Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C $_{3nu}$ symmetry in -type 4H-SiC

SIMS analyses of SiO $_{2}$ /4H-SiC(0001) interface

Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H- and 6H-silicon carbide

Steam annealing effects on CV characteristics of MOS structures on (110) face of 4H-SiC

Effects of steam annealing on CV characteristics of 4H-SiC MOS structures

Improvement of SiO $_{2}$ /4H-SiC interface by using high temperature hydrogen annealing at 1000 $^{circ}$ C